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SCIENCE CHINA Information Sciences, Volume 60, Issue 8: 082401(2017) https://doi.org/10.1007/s11432-015-0976-9

Terahertz detector for imaging in 180-nm standard CMOS process

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  • ReceivedOct 8, 2016
  • AcceptedNov 21, 2016
  • PublishedFeb 10, 2017

Abstract

A CMOS terahertz (THz) detector implemented in a 180-nm standard CMOS process is proposed, and room-temperature detection of 0.94-THz radiation is demonstrated. The detector consists of an integrated on-chip patch antenna and a source-feeding NMOS transistor as the rectifying element. To improve the power transfer efficiency between the patch antenna and NMOS transistor, a novel short-stub matching network is proposed. An open quarter-wavelength microstrip transmission line connecting gate is proposed to eliminate the influence of the bonding wire and pad on the antenna-transistor impedance matching. Illuminated by a 0.94-THz BWO source, the measured voltage responsivity ($R_{\rm v}$) and noise equivalent power (NEP) of the detector are 31 V/W and 1.1 nW/Hz$^{1/2}$, respectively.


Funded by

National Natural Science Foundation of China(61474108)

National Natural Science Foundation of China(61331003)

Beijing Natural Science Foundation(4152051)

National Key Research and Development Program of China(2016YFA0202202)


Acknowledgment

Acknowledgments

This work was supported by National Key Research and Development Program of China (Grant No. 2016YFA0202202), National Natural Science Foundation of China (Grant Nos. 61474108, 61331003), Beijing Natural Science Foundation (Grant No. 4152051), and Chinese Academy of Sciences. The authors are grateful to Prof. H. Qin and Dr. J. D. Sun of Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, for the measurement support.

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