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SCIENCE CHINA Information Sciences, Volume 60, Issue 2: 022402(2017) https://doi.org/10.1007/s11432-015-1008-9

Electrical performance of static induction transistor with transverse structure

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  • ReceivedDec 29, 2015
  • AcceptedFeb 29, 2016
  • PublishedNov 14, 2016

Abstract

A novel static induction transistor with transverse surface gate structure was designed and successfully fabricated in this paper. Its basic electrical characteristics and frequency performance was investigated in depth. The optimum technological parameters such as source-gate space and epitaxial layer thickness for obtaining excellent frequency performance and high blocking voltage capacity were represented and discussed in detail. The main advantage of this work is that the performances of device were improved with simple structure and technological processes. The experimental and simulated results demonstrate the trans-conductance $g_{m}$ and gate-source breakdown voltage $BV_{GS}$ of the transverse type SIT increase from 60 to 87 ms and 20 to 26 V, respectively, in addition to obtaining higher than 100 MHz operating frequency under relatively simple technology processes compared with those of traditional vertical SIT.


Funded by

International Science {&} Technology Cooperation Project of Qinghai(2014-HZ-821)

National Natural Science Foundation of China(61366006)


Acknowledgment

Acknowledgments

This work was supported by National Natural Science Foundation of China (Grant No. 61366006), International Science {&} Technology Cooperation Project of Qinghai (Grant No. 2014-HZ-821).


References

[1] Zhang Y, Yang J H, Cai X Y, et al. Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor. Chinese J Semicond, 2010, 31: 044002 CrossRef Google Scholar

[2] Wang Y S, Wu R, Liu C J, et al. Researches on the injected charge potential barrier occurring in the static induction transistor in the high current region. Semicond Sci Tech, 2008, 23: 152-156 Google Scholar

[3] Chen G, Wu P, Bai S, et al. 213 W 500 MHz 4H-SiC static induction transistor. Appl Mech Mater, 2012, 130: 3392-3395 Google Scholar

[4] Weimann N G, Eastman L F, Obloh H, et al. GaN static induction transistor fabrication. In: Proceedings of the 26th International Symposium on Compound Semiconducors, Berlin, 1999. Google Scholar

[5] Fanghua P, Yasuyuki W, Hiroshi Y, et al. Effect of gate insulating layer on organic static induction transistor characteristics. Thin Solid Films, 2009, 518: 514-517 CrossRef Google Scholar

[6] Chen J B, Wang D, Zhang Y, et al. Analysis of the current transport mechanism of copper phthalocyanine organic static induction transistor. In: Proceedings of International Conference on Measurement, Information and Control (ICMIC), Harbin, 2013. 190--193. Google Scholar

[7] Yang J H, Sheng X Y, Wei Y, et al. Potential barrier height dependence on biased voltages of static induction thyristors. In: Proceedings of the 7th International Power Electronics and Motion Control Conference (IPEMC), Harbin, 2012. 2--5. Google Scholar

[8] Liu C J, Liu S, Bai Y J. Dependence of transient performance on potential distribution in a static induction thyristor channel. Chinese J Semicond, 2012, 33: 044009-517 CrossRef Google Scholar

[9] Zhang L J, Yang J H, Zhao F H. The characteristics of ESD protection device based on static induction thyristors. Appl Mech Mater, 2013, 303: 1803-1807 Google Scholar

[10] Nishizawa J I, Motoyan K. The 2. 45 GHz 36 W CW Si recessed gate type SIT with high gain and high voltage operation. IEEE Trans Electron Devices, 2000, 47: 82-87 Google Scholar

[11] Liu C J, Liu S, Bai Y J. Switching performances of static induction thyristor with buried-gate structure. Sci China Inf Sci, 2014, 57: 062401-87 Google Scholar

[12] Michio K, Yukio H, Mar1 K J, et al. Characteristics of high-power and high-breakdown-voltage static induction transistor with the high maximum frequency of oscillation. IEEE Trans Electron Devices, 1982, 29: 194-198 CrossRef Google Scholar

[13] Li S Y. Static Induction Devices Theory (in Chinese). Lanzhou: Lanzhou University Press, 2002. 187--202. Google Scholar

[14] Wang C, Wu C L, Wang J X, et al. Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunneling. Sci China Inf Sci, 2015, 58: 022402-198 Google Scholar

[15] Li H R, Li S Y. Physical features of the barrier-controlled blocking function of the static induction thyristor. IEEE Trans Electron Devices, 2011, 58: 1149-1157 CrossRef Google Scholar

[16] Zhu Y C, Liu Y H, Zhang L J, et al. Surface-gate SIT with high breakdown voltage for low power applications. In: Proceedings of the 2nd International Symposium on Instrumentation and Measurement, Sensor Network and Automation (IMSNA), Toronto, 2013. 867--870. Google Scholar

[17] Wang Y S, Li H R, Hu D Q. A microwave high power static induction transistor with double dielectrics gate structure. Chinese J Semicond, 2004, 25: 19-25 Google Scholar

[18] Wang Y S, Feng J J, Liu C J, et al. Improvements on voltage-resistant performance of bipolar static induction transistor (BSIT) with buried gate structure. Sci China Inf Sci, 2012, 55: 962-970 CrossRef Google Scholar

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