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SCIENCE CHINA Information Sciences, Volume 59, Issue 4: 042402(2016) https://doi.org/10.1007/s11432-015-5362-2

Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices

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  • ReceivedJan 18, 2015
  • AcceptedApr 27, 2015
  • PublishedMar 1, 2016

Abstract

Based on the integral method of single event upset (SEU) rate and an improved charge collection model for ultra-deep submicron complementary metal-oxide-semiconductor (CMOS) devices, three methods of SEU rate calculation are verified and compared. The results show that the integral method and the figure of merit (FOM) methods are basically consistent at the ultra-deep submicron level. By proving the validity of the carrier collection model considering charge sharing, the applicability of two FOM methods is verified, and the trends of single-bit and multiple-bit upset rates for ultra-deep submicron CMOS are analyzed.


Funded by

national Natural Science Foundation of China(61106062)


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