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SCIENCE CHINA Information Sciences, Volume 59, Issue 12: 122403(2016) https://doi.org/10.1007/s11432-015-5475-7

A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory

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  • ReceivedAug 11, 2015
  • AcceptedSep 25, 2015
  • PublishedApr 6, 2016

Abstract

This work presents a self-consistent two-dimensional (2-D) simulation method with unified physical models for different operation regimes of charge trapping memory. The simulation carefully takes into consideration the tunneling process, charge trapping/de-trapping mechanisms, and 2-D drift-diffusion transport within the storage layer. A string of three memory cells has been simulated and evaluated for different gate stack compositions and temperatures. The simulator is able to describe the charge transport behavior along bitline and tunneling directions under different operations. Good agreement has been made with experimental data, which hence validates the implemented physical models and altogether confirms the simulation as a valuable tool for evaluating the characteristics of three-dimensional NAND flash memory.


Funded by

"source" : null , "contract" : "2015AA016501"}]

National Natural Science Foundation of China(91230107)

"source" : null , "contract" : "2013CBA01604"

National High Technology Research and Development Program of China(863)

National Basic Research Program of China(973)


Acknowledgment

Acknowledgments

The authors would like to thank Prof. Tiao Lu from the Department of Scientific and Engineering Computing, School of Mathematical Sciences, Peking University, for a host of extremely meaningful discussions. This work was supported by National Natural Science Foundation of China (Grant No. 91230107), National Basic Research Program of China (973) (Grant No. 2013CBA01604), and National High Technology Research and Development Program of China (863) (Grant No. 2015AA016501).


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