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SCIENCE CHINA Information Sciences, Volume 59, Issue 10: 109302(2016) https://doi.org/10.1007/s11432-016-0072-3

A compact SCR model using advanced BJT models and standard SPICE elements

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  • ReceivedMar 1, 2016
  • AcceptedMar 29, 2016
  • PublishedAug 26, 2016

Abstract


Funded by

Natural Science Foundation of Beijing China(4162030)


Acknowledgment

Acknowledgments

This work was supported by Natural Science Foundation of Beijing, China (Grant No. 4162030).


References

[1] Zhang P, Wang Y, Zhang X, et al. Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp. Sci China Inf Sci, 2014, 57: 029401 Google Scholar

[2] Mertens R, Rosenbaum E. A physics-based compact model for SCR devices used in ESD protection circuits. In: Proceedings of International Reliability Physics Symposium, Anaheim, 2013. 2B.2.1--2B.2.7. Google Scholar

[3] Sarro J D, Rosenbaum E. A scalable SCR compact model for ESD circuit simulation. IEEE Trans Electron Dev, 2010, 57: 3275-3286 CrossRef Google Scholar

[4] Zhou Y, Connerney D, Carroll R, et al. Modeling MOS snapback for circuit-level ESD simulation using BSIM3 and VBIC models. In: Proceedings of IEEE International Symposium Quality Electronic Design (ISQED), San Jose, 2005. 476--481. Google Scholar

[5] Zhou Y, Hajjar J J, Righter A W, et al. Modeling snapback of LVTSCR devices for ESD circuit simulation using advanced BJT and MOS models. In: Proceedings of Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), Anaheim, 2007. 3A.3-1--3A.3-10. Google Scholar

[6] Toorn R V, Paaschens J, Kloosterman W. The MEXTRAM bipolar transistor model level 504.7. http://www.nxp.com/wcm{\_}documents/models. 2008. Google Scholar

[7] Hajjar J. SPICE compatible models for circuit simulation of ESD events. IEEE Electron Device Society, Colloquium University of Central Florida, Orlando, 2012. Google Scholar

[8] Maloney T J, Khurana N. Transmission line pulsing techniques for circuit modeling of ESD phenomena. In: Proceedings of Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), Minneapolis, 1985. 49--58. Google Scholar

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