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SCIENCE CHINA Information Sciences, Volume 61, Issue 6: 069402(2018) https://doi.org/10.1007/s11432-017-9145-2

A study of residual characteristics in floating gate transistors

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  • ReceivedFeb 16, 2017
  • AcceptedJun 12, 2017
  • PublishedSep 14, 2017

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant No. 61376032) and Tianjin Science and Technology Project of China (Grant No. 15ZCZDGX00180).

  • Figure 1

    (a) Structure of the floating gate transistor. (b) Illustration of the number of P/E sequences at 1-10 P/E cycles. (c) The Id-Vg characteristics of the floating gate transistor (i) before it is first programmed; (ii) after it is first programmed; (iii) after it is first erased for previously programmed cell. (d) The $V_{\rm th}$ after overwriting operations when 1 initial P/E cycle is performed.

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