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SCIENCE CHINA Information Sciences, Volume 61, Issue 6: 062403(2018) https://doi.org/10.1007/s11432-017-9192-5

Surface-plasmonic right-angle waveguide amplifiers

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  • ReceivedApr 9, 2017
  • AcceptedAug 1, 2017
  • PublishedNov 20, 2017

Abstract

We propose a surface-plasmonic right-angle bend waveguidewith bismuth ion-doped glass film as core layer and Ag films as claddinglayers for first time, to the best of our knowledge. Theoretical analysisshows that the right-angle has bend and absorption losses of 3.17 dB. Therate equations and power evolution equations of high concentrationbismuth-doped glass film are setup and solved to analyze the effect of thewaveguide length and active ion concentration on the signal gain and NoiseFigure (NF). The theoretical results predict that with the pump power 100 mW,the active ion concentration 2.0$\times~$10$^{26}$ ions/m$^{3}$ and theright-angle waveguide size 1.0 cm$\times~$1.0 cm, small-signal unit-lengthnet gain can reach 15.32 dB with NF less than 5.0 dB.


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant Nos. 60377023, 61671306) and Science and Technology Innovation Commission of Shenzhen (Grant No. JCYJ20160328- 145357990).


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  • Figure 1

    (Color online) A waveguide structure with bismuth-doped glass film (BiG) as core layer and Ag films as cladding layers. (a) Principal view; (b) cutaway view.

  • Figure 2

    Schematic coordination configuration energy levels of bismuth-doped glass with excited state absorption.protectłinebreak (a) Two electrons are excited to 3rd-levels; (b) one electron transits to ground level and other is excited to 4th-level; (c) one electron is excited to 3rd-level and other is excited to higher level.

  • Figure 3

    (Color online) Transmission, reflection and loss spectra of un-doped MIM right-angle waveguide calculated using FDTD method. `a' is an arbitrary unit, `c' is speed of light.

  • Figure 4

    (Color online) Dependence of small-signal gain of bismuth-doped glass waveguide amplifier on waveguide length. Doping concentration, pump power, signal wavelength and signal input power are 2.0$\times~$10$^{26}$ /m$^{3}$, 100 mW, 1532 nm and 1.0 $\mu$W, respectively.

  • Figure 5

    (Color online) Variation of small-signal gain and noise figure of bismuth ion-doped waveguide amplifier on bismuth ion concentration. Waveguide length, pump power, signal wavelength and signal input power are 10.0 cm, protect 100 mW, 1532 nm and 1.0 $\mu$W, respectively.

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