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SCIENCE CHINA Information Sciences, Volume 61, Issue 6: 062402(2018) https://doi.org/10.1007/s11432-017-9198-1

High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels

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  • ReceivedJan 28, 2017
  • AcceptedJul 26, 2017
  • PublishedNov 20, 2017

Abstract

In this paper, we present a novel high-voltagelow on-resistance trench-gate (TG) hole-gas enhancement-mode (E-mode)high-electron mobility transistor (HEMT) with multi-conduction channels(MCs) and investigate its mechanism using simulations. This device featuresa repetitive AlN/GaN hetero-junction unit and a GaN/Al$_{0.26}$Ga$_{0.74}$Nhetero-junction. Its source and drain are located on the same side of themetal-insulator-semiconductor (MIS) TG, and the source is located besidethe gate. During operation, first, 2-D electron gas (2DEG) forms MCs atmultiple AlN/GaN hetero-interfaces. These MCs result in ultra-low specificon-resistance ($R_{\rm~on,sp})$ and improved transconductance ($g_{\rm~m})$. Second, 2-Dhole gas (2DHG) is induced at the GaN/Al$_{0.26}$Ga$_{0.74}$Nhetero-interface to prevent electrons from being injected from the source tothe MCs. As such, E-mode operation is realized, which exceeds theperformance of the conventional E-mode method by depleting the 2DEG underthe gate. Third, in the off-state, 2DHG and 2DEG are depleted into negativeand positive charges, respectively, thereby forming the polarizationjunction. This depletion region is extended due to the electric field(E-field) modulation effect by the polarization junction, thereby achievingan enhanced breakdown voltage (BV). Fourth, the drain-induced barrier lowering(DIBL) effect is significantly suppressed, which ensures a high BV and lowleakage current. Additionally, due to the unique source location, theTG-MC-HEMT is smaller than the conventional MIS AlGaN/GaN HEMT (Con-HEMT).The BV of the TG-MC-HEMT is 604 V and the $R_{\rm~on,sp}$ value can be as small as0.38 m$\Omega~\cdot~$cm$^{2}$.


Acknowledgment

This work was supported in part by National Natural Science Foundation of China (Grant No. 51677021) and Fundamental Research Funds for the Central Universities (Grant No. ZYGX2014Z006).


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