SCIENCE CHINA Information Sciences, Volume 60, Issue 12: 120401(2017) https://doi.org/10.1007/s11432-017-9239-5

Total ionizing dose effects and annealing behaviors of HfO$_2$-based MOS capacitor

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  • ReceivedJul 14, 2017
  • AcceptedSep 5, 2017
  • PublishedNov 6, 2017


There is no abstract available for this article.


This work was supported in part by National Natural Science Foundation of China (Grant No. 61634008) and Youth Innovation Promotion Association CAS (Grant No. 2014101).


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  • Figure 1

    (Color online) (a) Illustration of the capacitor structure (not to scale); (b) 1 MHz CV characteristics of HfO$_2$ MOS capacitor; (c) $\Delta~V~_{\rm~fb}$ shifts; (d) $\Delta~V_{\rm~mg}$ shifts; (e) the generation process of $Q_{\rm~ot}$ and $Q_{\rm~it}$ under $\gamma$ ray irradiation;protectłinebreak (f) $\Delta~N_{\rm~ot}$ and $\Delta~N_{\rm~it}$ of HfO$_2$ devices; (g) RT and 100$^\text{o}$C annealing behaviors after irradiaion; (h) hysteresis window of HfO$_2$; (i) hysteresis window after radiation and following annealings.

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