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SCIENCE CHINA Information Sciences, Volume 60, Issue 12: 120401(2017) https://doi.org/10.1007/s11432-017-9239-5

Total ionizing dose effects and annealing behaviors of HfO$_2$-based MOS capacitor

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  • ReceivedJul 14, 2017
  • AcceptedSep 5, 2017
  • PublishedNov 6, 2017

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported in part by National Natural Science Foundation of China (Grant No. 61634008) and Youth Innovation Promotion Association CAS (Grant No. 2014101).


References

[1] Moazzami R, Hu C. Stress-induced current in thin silicon dioxide films. In: Proceedings of International Technical Digest on Electron Devices Meeting, San Francisco, 1992. 139--142. Google Scholar

[2] Tan T, Liu Z, Lu H. Band structure and valence-band offset of HfO$_{2}$ thin film on Si substrate from photoemission spectroscopy. Appl Phys A, 2009, 97: 475-479 CrossRef ADS Google Scholar

[3] Kang A Y, Lenahan P M, Conley Jr. J F. Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si. Appl Phys Lett, 2003, 83: 3407-3409 CrossRef ADS Google Scholar

[4] Ergin F B, Turan R, Shishiyanu S T. Effect of γ-radiation on HfO2 based MOS capacitor. Nucl Instruments Methods Phys Res Sect B-Beam Interactions Mater Atoms, 2010, 268: 1482-1485 CrossRef ADS Google Scholar

[5] Savic Z, Radjenovic B, Pejovic M. The contribution of border traps to the threshold voltage shift in pMOS dosimetric transistors. IEEE Trans Nucl Sci, 1995, 42: 1445-1454 CrossRef ADS Google Scholar

[6] Risti´c G S, Pejovi´c M M, Jakˇsi´c A B. Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors. J Appl Phys, 2000, 87: 3468-3477 CrossRef ADS Google Scholar

  • Figure 1

    (Color online) (a) Illustration of the capacitor structure (not to scale); (b) 1 MHz CV characteristics of HfO$_2$ MOS capacitor; (c) $\Delta~V~_{\rm~fb}$ shifts; (d) $\Delta~V_{\rm~mg}$ shifts; (e) the generation process of $Q_{\rm~ot}$ and $Q_{\rm~it}$ under $\gamma$ ray irradiation;protectłinebreak (f) $\Delta~N_{\rm~ot}$ and $\Delta~N_{\rm~it}$ of HfO$_2$ devices; (g) RT and 100$^\text{o}$C annealing behaviors after irradiaion; (h) hysteresis window of HfO$_2$; (i) hysteresis window after radiation and following annealings.

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