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SCIENCE CHINA Information Sciences, Volume 60, Issue 12: 120404(2017) https://doi.org/10.1007/s11432-017-9249-6

Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor

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  • ReceivedJul 10, 2017
  • AcceptedSep 18, 2017
  • PublishedNov 6, 2017

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant Nos. 61704127, 61574171, 11175138). Thanks for the Institute of Microelectronics, Tsinghua University. Thanks for China Institute of Atomic Energy.


References

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[5] Fleetwood Z E, Lourenco N E, Ildefonso A. Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs. IEEE Trans Nucl Sci, 2017, 64: 398-405 CrossRef ADS Google Scholar

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  • Figure 1

    (Color online) The irradiation test results of the SiGe HBT. (a) The transient currents as function of time by micro-beam heavy-ion test and simulation; (b) the collected charges as function of time by micro-beam heavy-ion test and simulation; (c) the transient currents at different power voltages in irradiation test; (d) the collected charges at different power voltages in irradiation test; (e) comparing the SEE sensitive volume of charge collection at collector by test and simulation; (f) comparing the SEE sensitive volume of charge collection at base by test and simulation.

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