SCIENCE CHINA Information Sciences, Volume 60, Issue 12: 120404(2017) https://doi.org/10.1007/s11432-017-9249-6

Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor

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  • ReceivedJul 10, 2017
  • AcceptedSep 18, 2017
  • PublishedNov 6, 2017


There is no abstract available for this article.


This work was supported by National Natural Science Foundation of China (Grant Nos. 61704127, 61574171, 11175138). Thanks for the Institute of Microelectronics, Tsinghua University. Thanks for China Institute of Atomic Energy.


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