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SCIENCE CHINA Information Sciences, Volume 60, Issue 12: 120404(2017) https://doi.org/10.1007/s11432-017-9249-6

Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor

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  • ReceivedJul 10, 2017
  • AcceptedSep 18, 2017
  • PublishedNov 6, 2017

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant Nos. 61704127, 61574171, 11175138). Thanks for the Institute of Microelectronics, Tsinghua University. Thanks for China Institute of Atomic Energy.


References

[1] Cressler J D, Niu G F. Silicon-Germanium Heterojunction Bipolar Transistors. Boston: Artech House, 2003. 22--30. Google Scholar

[2] Cressler J D. Radiation Effects in SiGe Technology. IEEE Trans Nucl Sci, 2013, 60: 1992-2014 CrossRef ADS Google Scholar

[3] Xu Z Y, Niu G F, Luo L, et al. Charge collection and SEU in SiGe HBT current mode logic operating at cryogenic temperatures. IEEE Trans Nucl Sci, 2010, 57: 3206--3211. Google Scholar

[4] Varadharajaperumal M. 3D simulation of SEU in SiGe HBTS and radiation hardening by design. Dissertation for Ph.D. Degree. Alabama: Auburn University, 2010. 89--93. Google Scholar

[5] Fleetwood Z E, Lourenco N E, Ildefonso A. Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs. IEEE Trans Nucl Sci, 2017, 64: 398-405 CrossRef ADS Google Scholar

[6] Zhang J, Guo H, Wen L. 3-D simulation of angled strike heavy-ion induced charge collection in silicon-germanium heterojunction bipolar transistors. J Semicond, 2014, 35: 044003 CrossRef ADS Google Scholar

[7] Zhang J, He C, Guo H. 3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment. MicroElectron Reliability, 2015, 55: 1180-1186 CrossRef Google Scholar

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