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SCIENCE CHINA Information Sciences, Volume 60, Issue 12: 120402(2017) https://doi.org/10.1007/s11432-017-9250-7

Research on proton radiation effects on CMOS image sensors withexperimental and particle transport simulation methods

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  • ReceivedJul 15, 2017
  • AcceptedSep 18, 2017
  • PublishedNov 6, 2017

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant Nos. 11305126, 11235008) and Foundation of State Key Laboratory of China (Grant No. SKLIPR1211).


References

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  • Table 1   Calculated parameters
    Proton energy Proton fluence TID DD Dark signal Dark signal Dark DSNU DSNU DSNU$_{1}$
    (MeV) (10$^{10}$ p/cm$^{2})$ krad(Si) MeV/g DN (TID) DN signal$_{1}$ DN DN (TID) DN DN
    3 1 23.5 2.44$\times~$10$^{8}$ 121.1 0 121.1 146.2 0 146.2
    3 5 117.5 1.22$\times~$10$^{9}$ 551.3 183.8 367.5 310.2 10.0 300.2
    3 10 235.0 2.44$\times~$10$^{9}$ 1003.5 480.4 523.1 411.2 26.2 385.0
    10 1 9.6 7.09$\times~$10$^{7}$ 38.2 0 38.2 127.2 0 127.2
    10 5 47.9 3.55$\times~$10$^{8}$ 167.4 8.4 159.0 216.2 0.4 215.6
    10 10 95.8 7.10$\times~$10$^{8}$ 340.2 129.0 111.2 302.2 7.1 295.1

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