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SCIENCE CHINA Information Sciences, Volume 60, Issue 12: 120405(2017) https://doi.org/10.1007/s11432-017-9254-2

High energy proton and heavy ion induced single event transient in 65-nm CMOS technology

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  • ReceivedJul 15, 2017
  • AcceptedAug 21, 2017
  • PublishedNov 6, 2017

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported in part by the National Natural Science Foundation of China (Grant Nos. 11690045, 61674015).


References

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  • Figure 1

    The SET experiment and experimental results. The SET cross-section under (a) high-energy protons and (b) heavy ions; the (c) INV, (d) NAND, and (e) NOR SET pulse width distribution under high-energy protons; the (f) INV, (g) NAND, and (h) NOR SET pulse width distribution under heavy ions.

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