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SCIENCE CHINA Information Sciences, Volume 61 , Issue 6 : 069405(2018) https://doi.org/10.1007/s11432-017-9264-0

GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs

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  • ReceivedAug 11, 2017
  • AcceptedOct 10, 2017
  • PublishedApr 16, 2018

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61421005, 61534004, 60806033, 61474004), National High Technology Research and Development Program of China (Grant No. 2015AA016501), and National Key Research and Development Plan (Grant No. 2016YFA0200504).


Supplement

Appendix A.


References

[1] Yuan W, Xu J, Liu L. A physical model of hole mobility for germanium-on-insulator pMOSFETs. J Semicond, 2016, 37: 044004 CrossRef ADS Google Scholar

[2] Lin M, An X, Li M. Ge surface passivation by GeO$_{2}$ fabricated by N$_{2}$O plasma oxidation. Sci China Inf Sci, 2015, 58: 042403. Google Scholar

[3] Deleonibus S. Looking into the future of Nanoelectronics in the Diversification Efficient Era. Sci China Inf Sci, 2016, 59: 061401 CrossRef Google Scholar

[4] Antoniadis D A, Khakifirooz A. MOSFET performance scaling: Limitations and future options. In: Proceedings of IEEE International Electron Devices Meeting, San Francisco, 2008. 1--4. Google Scholar

[5] Okinaka M, Hamana Y, Tokuda T. MBE growth mode and C incorporation of GeC epilayers on Si(0 0 1) substrates using an arc plasma gun as a novel C source. J Cryst Growth, 2003, 249: 78-86 CrossRef ADS Google Scholar

[6] Hoffmann L, Bach J C, Bech Nielsen B. Substitutional carbon in germanium. Phys Rev B, 1997, 55: 11167-11173 CrossRef ADS Google Scholar

[7] Song L W, Zhan X D, Benson B W. Bistable interstitial-carbon$-$substitutional-carbon pair in silicon. Phys Rev B, 1990, 42: 5765--5783. Google Scholar

[8] Tessema G, Bekele M, Vianden R. Growth of germanium-carbide thin film on crystal substrate. J Mater Sci-Mater Electron, 2010, 21: 1144-1148 CrossRef Google Scholar

[9] Itokawa H, Miyano K, Oshima Y. Carbon incorporation into substitutional silicon site by molecular carbon ion implantation and recrystallization annealing as stress technique in n-metal-oxide-semiconductor field-effect transistor. Jpn J Appl Phys, 2010, 49: 04DA05. Google Scholar

  • Figure 1

    (Color online) HRXRD and HRTEM results of samples. (a) HRXRD spectrum obtained from sample without and with SPE at $500^\text{o}$C, 600 s, HRXRD spectrum of sample with SPE at (b) different annealing temperature ($400^\text{o}$C–$600^\text{o}$C) and (c) different annealing time (60–600 s), (d) HRTEM pictures of SPE sample formed at the optimal condition.

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