SCIENCE CHINA Information Sciences, Volume 61, Issue 6: 062405(2018) https://doi.org/10.1007/s11432-017-9323-0

Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method

More info
  • ReceivedJul 28, 2017
  • AcceptedOct 20, 2017
  • PublishedApr 27, 2018


The dark signal degradation of the CMOS image sensor (CIS) was induced by neutron radiation, and it was modeled by Geant4, which is a three-dimensional Monte Carlo code. The simplified model of the CIS array was established according to the actual pixel geometry, material, and doping concentration. Nuclear elastic interaction and capture interaction were included in the physical processes, and the displacement damage dose in the space charge region of the pixel was calculated. The mean dark signal and dark signal distribution were modeled using Geant4, and the physical mechanisms were analyzed. The modeling results were in good agreement with the experimental and theoretical results.


This work was supported by Strategic Priority Research Program of Chinese Academy of Science (Grant No. XDA15015000), National Natural Science Foundational of China (Grant No. 11690043), and Foundation of State Key Laboratory of China (Grant No. SKLIPR1610).


[1] Zhou Y F, Cao Z X, Qin Q. A high speed 1000 fps CMOS image sensor with low noise global shutter pixels. Sci China Inf Sci, 2014, 57: 042405 CrossRef Google Scholar

[2] Zhou Y F, Cao Z X, Han Y. A low power global shutter pixel with extended FD voltage swing range for large format high speed CMOS image sensor. Sci China Inf Sci, 2015, 58: 042406 CrossRef Google Scholar

[3] Chen Z, Di S, Cao Z X. A 256256 time-of-flight image sensor based on center-tap demodulation pixel structure. Sci China Inf Sci, 2016, 59: 042409 CrossRef Google Scholar

[4] Xue Y Y, Wang Z J, Liu M B. Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods. Sci China Inf Sci, 2017, 60: 120402 CrossRef Google Scholar

[5] Chen W, Yang H L, Guo X Q. The research status and challenge of space radiation physics and application (in Chinese). Chin Sci Bull, 2017, 62: 978-989 CrossRef Google Scholar

[6] Goiffon V, Virmontois C, Magnan P. Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors. IEEE Trans Nucl Sci, 2012, 59: 918-926 CrossRef ADS Google Scholar

[7] Goiffon V, Estribeau M, Magnan P. Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology. IEEE Trans Electron Dev, 2009, 56: 2594-2601 CrossRef ADS Google Scholar

[8] Virmontois C, Goiffon V, Magnan P. Similarities between proton and neutron induced dark current distribution in CMOS image sensors. IEEE Trans Nucl Sci, 2012, 59: 927-936 CrossRef ADS Google Scholar

[9] Virmontois C, Goiffon V, Magnan P. Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology. IEEE Trans Nucl Sci, 2010, 57: 3101-3108 CrossRef ADS Google Scholar

[10] Wang Z J, Liu C J, Ma Y. Degradation of CMOS APS image sensors induced by total ionizing dose radiation at different dose rates and biased conditions. IEEE Trans Nucl Sci, 2015, 62: 527-533 CrossRef ADS Google Scholar

[11] Wang Z J, Ma W Y, Liu J. Degradation and annealing studies on gamma rays irradiated COTS PPD CISs at different dose rates. Nucl Instrum Meth Phys Res A, 2016, 820: 89-94 CrossRef ADS Google Scholar

[12] Allison J, Amako K, Apostolakis J. Geant4 developments and applications. IEEE Trans Nucl Sci, 2006, 53: 270-278 CrossRef ADS Google Scholar

[13] European Machine Vision Association (EMVA). EMVA Stand 1288. 2012. Google Scholar

[14] Srour J R, Palko J W. Displacement damage effects in irradiated semiconductor devices. IEEE Trans Nucl Sci, 2013, 60: 1740-1766 CrossRef ADS Google Scholar

[15] Wang Z J, Huang S Y, Liu M B. Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor. AIP Adv, 2014, 4: 077108 CrossRef ADS Google Scholar

[16] Srour J R, Lo D H. Universal damage factor for radiation-induced dark current in silicon devices. IEEE Trans Nucl Sci, 2000, 47: 2451-2459 CrossRef ADS Google Scholar

Copyright 2020 Science China Press Co., Ltd. 《中国科学》杂志社有限责任公司 版权所有

京ICP备18024590号-1       京公网安备11010102003388号