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SCIENCE CHINA Information Sciences, Volume 61, Issue 6: 060411(2018) https://doi.org/10.1007/s11432-017-9356-4

Integration of biocompatible organic resistive memory and photoresistor for wearable image sensing application

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  • ReceivedNov 30, 2017
  • AcceptedJan 10, 2018
  • PublishedApr 18, 2018

Abstract

The integration of multiple functional devices to achieve complex functions has become an essential requirement for future wearable biomedical electronic devices and systems. In this paper, we present a flexible multi-functional device composed of a biocompatible organic polymer resistive random-access memory (RRAM) and a photoresistor for wearable image sensing application. The resistive layer of organic polymer RRAM is composed by polychloro-para-xylylene (parylene-C), which is a flexible, transparent, biocompatibility and chemical stability polymer material. What is more, parylene-C is quite safe to be used within human body as it is a Food and Drug Administration (FDA)-approved material. This organic RRAM shows stable switching characteristics, low operation voltages (3.25 V for set voltage and $-$0.55 V for reset voltage), low static power consumption, high storage window and good retention properties ($>$10$^4$ s). A multi-functional device that can detect the light intensity of incident light and simultaneously store the information in the memory devices for wearable image sensing application was proposed and fabricated by integrating the organic resistive memory and a photoresistor. The threshold of incident light intensity can be easily adjust by changing the external voltage. This device is promising for building wearable electronic systems with various multiple functionalities.


Acknowledgment

This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61574007, 61376087, 61421005), Beijing Municipal Science and Technology Commission Program (Grant No. Z161100000216148), and Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (Grant No. IIMDKFJJ-14-08).


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  • Figure 1

    (Color online) The schematic of our flexible multi-functional device which integrates a parylene-C based resistive memory and a photoresistor. The illustration in the upper right indicates that our flexible organic RRAM can be easily torn off the silicon wafer.

  • Figure 2

    (Color online) The schematic of the polymer CVD process of the parylene-C thin film.

  • Figure 3

    (Color online) The test system in this experiment.

  • Figure 4

    (Color online) (Red) Measured typical I-V curve of our Al/parylene-C/W device. Arrows show the voltage sweep direction and the extracted set and reset voltage are 3.25 V and $-$0.55 V, respectively. The resistance window is quite high, and the set compliance current is 1 mA. (Blue) Typical I-V curve after the bended device was torn off from the silicon wafer.

  • Figure 5

    (Color online) The retention behavior of our parylene-C based device measured by applying a 0.1 V read voltage at room temperature. There is no apparent degradation after $10^4$ s for both LRS and HRS.

  • Figure 6

    (Color online) The typical I-V curve of the writing process of our multi-functional device at bright environment.

  • Figure 7

    (Color online) The writing process of our multi-functional device. At about 10 s, the light is on, which resulted in the switching of RRAM.

  • Figure 8

    (Color online) The relationship between the total voltages applied on the multi-functional device and the threshold of light intensity of the incident light that just can switch the RRAM. Here, the light intensity of the incident light is expressed as the brightness percentage of the lamp. The threshold of light intensity will decrease when the total voltages increase.

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