SCIENCE CHINA Information Sciences, Volume 61, Issue 6: 069403(2018) https://doi.org/10.1007/s11432-017-9360-7

Defect characterization of amorphous silicon thin film solar cell based on low frequency noise

More info
  • ReceivedOct 13, 2017
  • AcceptedJan 23, 2018
  • PublishedApr 11, 2018


There is no abstract available for this article.


This work was supported by National Natural Science Foundation of China (Grant No. 61106062), Fundamental Research Funds for the Central Universities (Grant No. JB181409), and Ankang College Youth Fund (Grant No. 2017AYQN06).


[1] Fine B V, Bakker J P R, Dijkhuis J I. Long-range potential fluctuations and 1/f noise in hydrogenated amorphous silicon. Phys Rev B, 2003, 12: 409-412 CrossRef ADS Google Scholar

[2] He L, Chen H, Sun P. Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices. Sci China Inf Sci, 2016, 59: 042402 CrossRef Google Scholar

[3] Xiong S Z, Zhu M F. Fundamentals and Applications of Solar Cells. Beijing: Science Press, 2009. Google Scholar

[4] Zhuang Y Q, Sun Q. Noise and its Minimizing Technology in Semiconductor Devices. Beijing: National Defense Industry Press, 1993. Google Scholar

[5] Simoen E, Cretu B, Fang W. Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices. Solid State Phenom, 2015, 242: 449-458 CrossRef Google Scholar

[6] Liu E K, Zhu B S, Luo J S. Semiconductor Physics. Beijing: National Defense Industry Press, 2010. Google Scholar

Copyright 2020 Science China Press Co., Ltd. 《中国科学》杂志社有限责任公司 版权所有

京ICP备18024590号-1       京公网安备11010102003388号