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SCIENCE CHINA Information Sciences, Volume 62, Issue 6: 062402(2019) https://doi.org/10.1007/s11432-017-9427-1

Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection

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  • ReceivedNov 24, 2017
  • AcceptedApr 2, 2018
  • PublishedJan 18, 2019

Abstract

A conventional diode-triggered silicon-controlled rectifier (DTSCR) structure with a layout strategy for electrostatic discharge (ESD) protection is presented and confirmed in a 65-nm CMOS technology. The modified device is featured by a scaled-down trigger-diode string, which shortens its turn-on time using a variable scaling factor. To confirm the parasitic resistance adjustments of the modified DTSCR, transmission line pulsing (TLP)/very fast transmission line pulsing (VF-TLP) tests and simulations are performed on the device. Compared to a conventional DTSCR, this structure exhibits an improved turn-on speed and robustness, which are suitable for I/O protection of ESD events in the nanosecond range, particularly the charged-device model (CDM) event.


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant No. 61774005) and Beijing Natural Science Foundation (Grant No. 4162030).


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