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SCIENCE CHINA Information Sciences, Volume 62, Issue 6: 069402(2019) https://doi.org/10.1007/s11432-017-9549-8

Dependency of well-contact density on MCUs in 65-nm bulk CMOS SRAM

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  • ReceivedNov 12, 2017
  • AcceptedAug 14, 2018
  • PublishedOct 22, 2018

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported by Preliminary Research Program of National University of Defense Technology of China (Grant No. 0100066314001).


References

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  • Figure 1

    (Color online) (a) Upset in logical word of SRAM in the experiments. The size of upset in physical address on three SRAMs in the experiments at O exposure (b), at Ti exposure (c), and at Ge exposure (d).

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