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SCIENCE CHINA Information Sciences, Volume 61, Issue 10: 109401(2018) https://doi.org/10.1007/s11432-018-9398-6

Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology

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  • ReceivedFeb 6, 2018
  • AcceptedMar 27, 2018
  • PublishedAug 31, 2018

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61421005, 60806033, 61534004, 61474004) and National Key Research and Development Plan (Grant No. 2016YFA0200504).


References

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  • Figure 1

    (Color online) Physical and electrical characteristics of NiGe film. (a) 3D AFM images (5 $\mu$m$\times$5 $\mu$m) and SEM images of NiGe film with and without NPP formed at different temperature ($400^{\circ}$C–$600^{\circ}$C); (b) HRTEM images of NiGe films with and without NPP formed at $500^{\circ}$C; (c) sheet resistance of NiGe film formed with different NPP process time at $500^{\circ}$C and comparison of different methods [6-8]; (d) I-V curves of NiGe/n-Ge Schottky diodes with and without NPP (120 s).

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