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SCIENCE CHINA Information Sciences, Volume 61, Issue 8: 080405(2018) https://doi.org/10.1007/s11432-018-9478-1

Fabrication of InP-based monolithically integrated laser transmitters

Song LIANG1,2,3,*, Dan LU1,2,3, Lingjuan ZHAO1,2,3,*, Hongliang ZHU1,2,3, Baojun WANG1,2,3, Daibing ZHOU1,2,3, Wei WANG1,2,3
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  • ReceivedFeb 18, 2018
  • AcceptedMay 16, 2018
  • PublishedJul 9, 2018

Abstract

InP-based photonic integrated circuits (PICs) have aroused great interest in recent years to meet the needs of future high-capacity and high-performance optical systems. With the advantages of small size, low power consumption, low cost, high reliability, InP-based PICs are promising solutions to replace the multiple discrete devices used in various systems. In this paper, we will review the design, fabrication, key integration technology and performance of several kinds of InP-based monolithically integrated transmitters developed in our group in recent years. Particular attention will be paid to the electro-absorption modulated laser (EML), multi-wavelength distributed feedback (DFB) laser arrays, widely tunable distributed reflector (DBR) lasers and their arrays, integrated amplified feedback lasers (AFL), and few-mode transmitters.


Acknowledgment

The work was supported by National Natural Science Foundation of China (NSFC) (Grant Nos. 61635010, 61474112, 61574137, 61320106013, 61335009, 61321063, 61674134, 61274071), National Key Research and Development Program of China (Grant No. 2016YFB0402301), National High Technology Research and Development Program of China (863 Program) (Grant No. 2013AA014502), and National Basic Research Program of China (973 Program) (Grant No. 2014CB340102).


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