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SCIENCE CHINA Information Sciences, Volume 62, Issue 6: 069403(2019) https://doi.org/10.1007/s11432-018-9554-4

Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors

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  • ReceivedMar 13, 2018
  • AcceptedAug 23, 2018
  • PublishedJan 10, 2019

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant Nos. 11875223, 11805155, 11690043), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDA15015000), the Innovation Foundation of Radiation Application (Grant No. KFZC2018040201), and the Foundation of State Key Laboratory of China (Grant No. SKLIPR1803, 1610).


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References

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  • Figure 1

    (Color online) Dark signal degradation induced by Gamma ray, proton, and neutron radiation. (a) The dark signal distributions versus the TID induced by cobalt-60 Gamma ray radiation; (b) the comparison of dark signal distributions; (c) the front part of dark signal distribution of (b) by shortening the horizontal abscissa.

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