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SCIENCE CHINA Information Sciences, Volume 62, Issue 6: 069404(2019) https://doi.org/10.1007/s11432-018-9561-9

Single-event upset prediction in static random access memory cell account for parameter variations

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  • ReceivedApr 25, 2018
  • AcceptedAug 21, 2018
  • PublishedFeb 26, 2019

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant Nos. 61704039, 61771167), Natural Science Foundation of Heilongjiang Province (Grant No. QC2017073), Science and Technology Innovation Foundation of Harbin (Grant No. 2016RAQXJ068), Fundamental Research Funds for the Central Universities (Grant No. HIT. NSRIF. 2018.09), and the “111 project" (Grant No. B18017).


References

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  • Figure 1

    (Color online) Simulation results. (a) SEU probabilities for PMOS charge collection in 65-nm SRAM; (b) SEU probabilities for NMOS charge collection in 65-nm SRAM; (c) comparison of SEU cross-section for the 65- and 45-nm SRAMs; (d) SEU cross-section range percentage for the 65- and 45-nm transistors; (e) SEU cross-section shifts induced by parameter variations in 65-nm simulations.

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