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SCIENCE CHINA Information Sciences, Volume 62, Issue 6: 069405(2019) https://doi.org/10.1007/s11432-018-9659-0

A physical channel-potential and drain-current model for asymmetric dual-gate a-IGZO TFTs

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  • ReceivedJul 5, 2018
  • AcceptedNov 7, 2018
  • PublishedMar 28, 2019

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant No. 61274085), and Science and Technology Planning Project of Guangdong Province (Grant No. 2015B090909001).


Supplement

Appendixes A–C.


References

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