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SCIENCE CHINA Information Sciences, Volume 62, Issue 6: 069407(2019) https://doi.org/10.1007/s11432-018-9791-2

Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs

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  • ReceivedSep 9, 2018
  • AcceptedFeb 22, 2019
  • PublishedApr 4, 2019

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported by National Science and Technology Major Project (Grant No. 2016ZX02301003), National Natural Science Foundation of China (Grant Nos. 61574056, 61704056), Shanghai Sailing Program (Grant No. YF1404700), and Science and Technology Commission of Shanghai Municipality (Grant No. 14DZ2260800).


References

[1] Doris B, Desalvo B, Cheng K, et al. Planarn Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28nm node and beyond. Solid-State Electron, 2015, 117: 37-59. Google Scholar

[2] Noel J P, Thomas O, Jaud M A. Multi-$V_{T}$ UTBB FDSOI Device Architectures for Low-Power CMOS Circuit. IEEE Trans Electron Devices, 2011, 58: 2473-2482 CrossRef ADS Google Scholar

[3] Yin L X, Shen L, Jiang H. Impact of self-heating effects on nanoscale Ge p-channel FinFETs with Si substrate. Sci China Inf Sci, 2018, 61: 062401 CrossRef Google Scholar

[4] Pop E, Sinha S, Goodson K E. Heat Generation and Transport in Nanometer-Scale Transistors. Proc IEEE, 2006, 94: 1587-1601 CrossRef Google Scholar

[5] He P, Lin X, Jiang B, et al. Measurement and simulation of electrical and thermal property of drain and source on insulator MOSFETs (DSOI). In: Proceedings of IEEE International SOI Conference, Williamsburg, 2002. 55--57. Google Scholar

[6] Narayanan M R, Nashash H A. Minimization of self-heating in SOI MOSFET devices with SELBOX structure. In: Proceedings of International Conference on Advanced Semiconductor Devices & Microsystems, Smolenice, 2016. 61--64. Google Scholar

  • Figure 1

    (a) Structures of the SELBOX and FDSOI MOSFETs; (b) thermal and DC performance in different devices; (c) electrostatic potential distributions on the top and bottom surfaces in different devices in the saturation state; and protectłinebreak (d) electrostatic potential distributions on the top and bottom surfaces in different devices in linear and saturation states.

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