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SCIENCE CHINA Information Sciences, Volume 62, Issue 12: 222401(2019) https://doi.org/10.1007/s11432-018-9799-1

Total ionizing dose effects on graphene-based charge-trapping memory

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  • ReceivedDec 30, 2018
  • AcceptedJan 31, 2019
  • PublishedNov 7, 2019

Abstract

This study investigates the total ionizing dose effects in graphene-based charge-trapping memory (GCTM) capacitors by using $^{60}$Co $\gamma$-irradiation. Electrical properties including $C-V$ hysteresis window, gate leakage current, and flat band voltage shifts are evaluated with ionizing dose levels up to 1 Mrad (Si). The $C-V$ hysteresis memory window is hardly affected by the irradiation. The gate leakage current increases with the increase of ionizing dose due to the multiple-trap assisted tunneling mechanism. Significant electrical degrade of the devices in programmed and erased states has been observed with the increase of the dose levels. Mechanisms behind the degradation are attributed to the photo-emission in the graphene nanodisc charge-trapping sets, radiation-induced holes trapping in the peripheral oxides, and the recombination of the stored electrons with the radiation-induced holes.


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant Nos. 61704188, 616340084), Youth Innovation Promotion Association CAS (Grant No. 2014101), and International Cooperation Project of CAS, Austrian-Chinese Cooperative RD Projects (Grant No. 172511KYSB20150006).


References

[1] Gerardin S, Bagatin M, Paccagnella A. Radiation Effects in Flash Memories. IEEE Trans Nucl Sci, 2013, 60: 1953-1969 CrossRef ADS Google Scholar

[2] Petrov A, Vasil'ev A, Ulanova A. Flash memory cells data loss caused by total ionizing dose and heavy ions. Open Phys, 2014, 12: 725-729 CrossRef ADS Google Scholar

[3] Gerardin S, Paccagnella A. Present and Future Non-Volatile Memories for Space. IEEE Trans Nucl Sci, 2010, 57: 3016-3039 CrossRef ADS Google Scholar

[4] Liu M H, Lu W, Ma W Y. Total ionizing dose effects of domestic SiGe HBTs under different dose rates. Chin Phys C, 2016, 40: 036003 CrossRef ADS arXiv Google Scholar

[5] Bi J S, Xu Y N, Xu G B, et al. Total Ionization Dose Effects on Charge-Trapping Memory With Al$_{2}$O$_{3}$/HfO$_{2}$/Al$_{2}$O$_{3}$ Trilayer Structure. IEEE Transactions on Nuclear Science, 2018, 65: 200-205. Google Scholar

[6] Xi K, Bi J S, Hu Y, et al. Impact of $\gamma$-ray irradiation on graphene nano-disc non-volatile memory. Applied Physics Letters, 2018, 113: 164103. Google Scholar

[7] Xu Y, Bi J, Xu G. Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor. Sci China Inf Sci, 2017, 60: 120401 CrossRef Google Scholar

[8] Bi J S, Han Z S, Zhang E X. The Impact of X-Ray and Proton Irradiation on ${\rm~~HfO}_2/{\rm~~Hf}$-Based Bipolar Resistive Memories. IEEE Trans Nucl Sci, 2013, 60: 4540-4546 CrossRef ADS Google Scholar

[9] Bi J S, Zeng C B, Gao L C. Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET. Chin Phys B, 2014, 23: 088505 CrossRef ADS Google Scholar

[10] Li X, Yang J, Fleetwood D M. Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors. IEEE Trans Nucl Sci, 2018, 65: 1271-1276 CrossRef ADS Google Scholar

[11] Wang Z, Xue Y, Chen W. Fixed Pattern Noise and Temporal Noise Degradation Induced by Radiation Effects in Pinned Photodiode CMOS Image Sensors. IEEE Trans Nucl Sci, 2018, 65: 1264-1270 CrossRef ADS Google Scholar

[12] Oldham T R, Ladbury R L, Friendlich M, et al. SEE and TID characterization of an advanced commercial 2Gbit NAND flash nonvolatile memory. IEEE Trans Nucl Sci, 2006, 53: 3217-3222. Google Scholar

[13] Schmidt H, Grurmann K, Nickson B, et al. TID test of an 8-Gbit NAND flash memory. IEEE Trans Nucl Sci, 2009, 56: 1937-1940. Google Scholar

[14] Nguyen D N, Guertin S M, Swift G M. Radiation effects on advanced flash memories. IEEE Trans Nucl Sci, 1999, 46: 1744-1750 CrossRef ADS Google Scholar

[15] Clark L T, Holbert K E, Adams J W. Evaluation of 1.5-T Cell Flash Memory Total Ionizing Dose Response. IEEE Trans Nucl Sci, 2015, 62: 2431-2439 CrossRef ADS Google Scholar

[16] Fazio A. Flash Memory Scaling. MRS Bull, 2004, 29: 814-817 CrossRef Google Scholar

[17] Banszerus L, Schmitz M, Engels S. Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper. Sci Adv, 2015, 1: e1500222-e1500222 CrossRef PubMed ADS Google Scholar

[18] Zhai P, Liu J, Zeng J. Evidence for re-crystallization process in the irradiated graphite with heavy ions obtained by Raman spectroscopy. Carbon, 2016, 101: 22-27 CrossRef Google Scholar

[19] Ribeiro-Palau R, Lafont F, Brun-Picard J. Quantum Hall resistance standard in graphene devices under relaxed experimental conditions. Nat Nanotech, 2015, 10: 965-971 CrossRef PubMed ADS Google Scholar

[20] Chen J H, Jang C, Xiao S. Intrinsic and extrinsic performance limits of graphene devices on SiO2.. Nat Nanotech, 2008, 3: 206-209 CrossRef PubMed Google Scholar

[21] Son Y W, Cohen M L, Louie S G. Half-metallic graphene nanoribbons. Nature, 2006, 444: 347-349 CrossRef PubMed ADS Google Scholar

[22] Peng J, Gao W, Gupta B K. Graphene Quantum Dots Derived from Carbon Fibers. Nano Lett, 2012, 12: 844-849 CrossRef PubMed ADS Google Scholar

[23] Lee M W, Kim H Y, Yoon H. Fabrication of dispersible graphene flakes using thermal plasma jet and their thin films for solar cells. Carbon, 2016, 106: 48-55 CrossRef Google Scholar

[24] Sin Joo S, Kim J, Seok Kang S. Graphene-quantum-dot nonvolatile charge-trap flash memories.. Nanotechnology, 2014, 25: 255203 CrossRef PubMed Google Scholar

[25] Wang S, Pu J, Chan D S H. Wide memory window in graphene oxide charge storage nodes. Appl Phys Lett, 2010, 96: 143109 CrossRef ADS Google Scholar

[26] Yang R, Zhu C, Meng J. Isolated nanographene crystals for nano-floating gate in charge trapping memory. Sci Rep, 2013, 3: 2126 CrossRef PubMed ADS Google Scholar

[27] Wang J C, Chang K P, Lin C T. Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications. Carbon, 2017, 113: 318-324 CrossRef Google Scholar

[28] Specht M, Reisinger H, Hofmann F. Charge trapping memory structures with Al $_{2}$O $_{3}$ trapping dielectric for high-temperature applications. Solid-State Electron, 2005, 49: 716-720 CrossRef ADS Google Scholar

[29] Kaniyankandy S, Achary S N, Rawalekar S. Ultrafast Relaxation Dynamics in Graphene Oxide: Evidence of Electron Trapping. J Phys Chem C, 2011, 115: 19110-19116 CrossRef Google Scholar

[30] Oldham T R, McLean F B. Total ionizing dose effects in MOS oxides and devices. IEEE Trans Nucl Sci, 2003, 50: 483-499 CrossRef ADS Google Scholar

[31] Hughes R C. Charge-Carrier Transport Phenomena in Amorphous SiO$_{2}$: Direct Measurement of the Drift Mobility and Lifetime. Phys Rev Lett, 1973, 30: 1333-1336 CrossRef ADS Google Scholar

[32] Lenahan R M, Campbell J P, Kang A Y. Radiation-induced leakage currents: atomic scale mechanisms. IEEE Trans Nucl Sci, 2001, 48: 2101-2106 CrossRef ADS Google Scholar

[33] Ceschia M, Paccagnella A, Cester A. Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides. IEEE Trans Nucl Sci, 1998, 45: 2375-2382 CrossRef ADS Google Scholar

[34] Bi J S, Xi K, Li B. Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory. Chin Phys B, 2018, 27: 098501 CrossRef ADS Google Scholar

  • Figure 1

    (Color online) Schematic illustration of the structure of the GCTM capacitor.

  • Figure 2

    (Color online) $C-V$ hysteresis characteristics of the fabricated GCTM devices and the DC memory window after irradiation. (a) $\pm$10 V sweep before irradiation; (b) $\pm$15 V sweep before irradiation; (c) $\pm$20 V sweep before irradiation; (d) DC memory as a function of total dose.

  • Figure 3

    (Color online) Representative P/E characteristics of the GCTM device before and after radiation. (a) Characteristics before irradiation; (b) post-radiation evaluation for the device in ERS state; (c) post-radiation evaluation for the device in PGM state; (d) flat band voltage shifts with radiation dose.

  • Figure 4

    (Color online) Leakage current-voltage characteristics of GCTM capacitors before and after irradiation.

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