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SCIENCE CHINA Information Sciences, Volume 63, Issue 2: 129403(2020) https://doi.org/10.1007/s11432-019-9875-2

Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO$_2$/TiN-capping/TiAl gate stacks

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  • ReceivedMar 13, 2019
  • AcceptedApr 22, 2019
  • PublishedJan 13, 2020

Abstract

There is no abstract available for this article.


Acknowledgment

This work was financially supported by National Key Project of Science and Technology of China (Grant Nos. 2017ZX02315001-002, 2019ZX02303).


References

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  • Figure 1

    (Color online) (a) $I_{\rm~d}$-$V_{\rm~g}$ curves of n-FinFETs with (red) and without (blue) an ALD TiN capping layer. protectłinebreak (b) The $V_{\rm~th}$ shift and stress time for devices with (red) and without (blue) an ALD TiN capping layer at $125^{\circ}\mathrm{C}$ over protectłinebreak 1000 s. (c) $V_{\rm~th}$ shift of n-FinFETs with and without an ALD TiN capping layer over 1000 s. (d) The $V_{\rm~th}$ shift as a function of temperature with 1 V over-drive voltage stress at 1000 s. The energy distribution of traps in the HK layer for $V_{\rm~th}$ + 1 V at 1000 s and $125^{\circ}\mathrm{C}$. (e) EDS data for n-FinFETs without and with an ALD TiN capping layer.

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