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SCIENCE CHINA Information Sciences, Volume 62, Issue 10: 202401(2019) https://doi.org/10.1007/s11432-019-9910-x

Low power and high uniformity of HfO$_{\boldsymbol~x}$-based RRAM via tip-enhanced electric fields

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  • ReceivedMar 22, 2019
  • AcceptedMay 31, 2019
  • PublishedAug 20, 2019

Abstract

In this paper, the HfO$_{x}$-based resistive random access memory (RRAM) devices with sub-100 nmłinebreak pyramid-type electrodes were fabricated. With the help of tip-enhanced electric field around the pyramid-type electrodes, it was experimentally demonstrated that the novel devices have better cycle-to-cycle variation control, lower forming/set voltage (1.97/0.7 V) and faster switching speed ($\leqslant$ 30 ns under 0.9 V pulse) as well as better endurance reliability than conventional flat electrode resistive memory devices. In addition, the novel RRAM is experimentally demonstrated with independence of electrode number for the first time to present great potential in scaling down. This novel structure metal-oxide based RRAM will be suitable for the future low-power non-volatile memory application.


Acknowledgment

This work was supported in part by National Key Research and Development Plan (Grant No. 2016YFA0200504), National Science and Technology Major Project (Grant No. 2017ZX02315001-004), National Natural Science Foundation of China (Grant No. 61421005), and 111 Project (Grant No. B18001).


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  • Figure 1

    (Color online) (a) Schematic diagrams of main flow to fabricate Si-pyramid; (b) AFM image of the pyramid structure; (c) the optical microscopy photograph of the fabricated Pt/HfO$_{x}$/Ti/Al RRAM; (d) SEM image of the Si-pyramid.

  • Figure 2

    (Color online) (a) The typical DC sweep curves of PE and FE. The uniformity of the switching voltages obtained by DC sweep operation for 100 devices of (b) FE and (c) PE. The cumulative probability of (d) set/reset voltages andprotect łinebreak (e) HRS/LRS for 100 continuous DC sweep cycles.

  • Figure 3

    (Color online) (a) Switching endurance of PE and FE under the set pulse (1.4 V, 22.5 ns) and reset pulseprotect łinebreak ($-$1.5 V, 100 ns) without verification. (b) The resistance transitions of PE for each cycle under the same pulse conditions in (a). The data retention of PE and FE at (c) $100^{\circ}$C and (d) $150^{\circ}$C. The resistance after set by varied pulsewidths under gradual increasing pulse amplitude in (e) PE and (f) FE.

  • Figure 4

    (Color online) Comparative illustrations of the morphology of the CFs in the (a) PE and (b) FE. (c) The electric field of the tip area simulated by Synopsys TCAD Sentaurus tools. The influence of number of pyramids on the (d) LRS, (e) set volatge and (f) reset voltage of 20 cells.

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