SCIENTIA SINICA Informationis, Volume 48, Issue 6: 688-700(2018) https://doi.org/10.1360/N112018-00097

Low-temperature epitaxial technology for flexible optoelectronic devices

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  • ReceivedApr 20, 2018
  • AcceptedApr 27, 2018
  • PublishedJun 13, 2018


Flexible optoelectronic devices need to make or loadphotoelectric conversion films on metal, glass, plastic and other flexiblenon-single crystal substrate. The existing methods for realizing flexibleoptoelectronic devices fall into two categories: deposition of organicoptoelectronic conversion films directly on non-single-crystal substrates ortransferring the epitaxial growth of the inorganic optoelectronic conversion filmfrom a single-crystal substrate to non-single-crystal substrate. The formercannot be used to produce inorganic optoelectronic devices on flexible non-single-crystalsubstrates, and the latter requires a difficult large-area transfer. If theinorganic optoelectronic devices can be extended directly on the flexiblenon-single-crystal substrate, a new technological and researchdirection will be developed for flexible inorganic optoelectronicdevices. Traditional epitaxial growth of inorganic optoelectronic devicesoften requires a high epitaxial growth temperature and a single-crystal substrate with a high softening temperature. The former dissolves thereactants and provides the atomic surface with migration capability, and thelatter provides the lattice arrangement of the inorganic optoelectronicconversion films. It is possible to directly grow the inorganicoptoelectronic thin film on the flexible non-single-crystal substratethrough the coupling of an electromagnetic field to reduce the temperaturerequired by the epitaxial growth. This paper analysis the research status oflow-temperature epitaxy technology, and emphatically introduces the low-temperature epitaxial method proposed by our research team-inductively coupledplasma metal-organic chemical vapor phase epitaxy (ICP-MOVPE)-including thedesign concept of ICP-MOVPE, the simulation of the plasma in the reactionchamber, and the preliminary results of this equipment for the epitaxialgrowth of III-nitride semiconductors.

Funded by

国家重点基础研究发展计划 (973)(2015CB351900)






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  • Figure 1

    (Color online) Application scenarios of III-V semiconductor devices

  • Figure 2

    Schematic diagram of PSD low temperature epitaxial technology

  • Figure 3

    Schematic diagram of RPCVD [24]low temperature epitaxial technology

  • Figure 4

    Schematic diagram of ICP-MOVPE reaction cavity [43]

  • Figure 5

    Energy distribution of various nitrogen active particles and the relationship with GaN binding energy

  • Figure 6

    Comparison of the distribution of plasma in the ICP chamber and the IF-ICP chamber

  • Figure 7

    Relationship among surface roughness RMS, Raman E$~_{2}$ (TO) modal peak and NDL

  • Figure 8

    (a) Relationship between RF power and growth rate; (b) RF power and XRD swing curve

  • Figure 9

    The AFM test results within $~5~\mu~$m$\times~5~\mu~$m of the 3 samples of (a) 30 Pa RMS = 19.2 nm; (b) 10 Pa RMS = 19.4 nm; (c) 1 Pa RMS = 9.48 nm

  • Figure 10

    XRD test results of ICP-MOVPE growth samples

  • Figure 11

    EBSD test results of ICP-MOVPE growth samples

  • Table 1   Comparison of the advantages and disadvantages of the four major low-temperature plasma generationprotectłinebreak methods
    Pressure (Pa) $~10~\sim~100$ $~0.4~\sim~40$ $~0.1~\sim~0.7$ $~0.05~\sim~1$
    Constraint magnetic field B (T) 0 0 0.1 0.01
    Electron density $n~_{\rm~e}~$ (cm$~^{-3}~$) $~10~^{10}~$ $~10~^{11}\sim~10~^{12}~$ $~10~^{11}\sim~10~^{12}~$ $~10~^{12}\sim~10~^{14}~$
    Advantages The reaction chamber is simple to make Produce high density plasma; low cost; the plate type ICP can produce large area homogeneous plasma High plasma density; high energy conversion rate ($~>~95$% The external magnetic intensity required is much smaller than the ECR; it has very high plasma density
    Disadvantages The plasma density produced is low Energy coupling technology is difficult (plate type) There is the possibility of pattern jumping; it is difficult to produce large homogeneous plasma It is difficult to produce large area homogeneous plasma

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