SCIENCE CHINA Information Sciences, Volume 61 , Issue 6 : 060411(2018) https://doi.org/10.1007/s11432-017-9356-4

Integration of biocompatible organic resistive memory and photoresistor for wearable image sensing application

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  • ReceivedNov 30, 2017
  • AcceptedJan 10, 2018
  • PublishedApr 18, 2018



This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61574007, 61376087, 61421005), Beijing Municipal Science and Technology Commission Program (Grant No. Z161100000216148), and Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (Grant No. IIMDKFJJ-14-08).


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  • Figure 1

    (Color online) The schematic of our flexible multi-functional device which integrates a parylene-C based resistive memory and a photoresistor. The illustration in the upper right indicates that our flexible organic RRAM can be easily torn off the silicon wafer.

  • Figure 2

    (Color online) The schematic of the polymer CVD process of the parylene-C thin film.

  • Figure 3

    (Color online) The test system in this experiment.

  • Figure 4

    (Color online) (Red) Measured typical I-V curve of our Al/parylene-C/W device. Arrows show the voltage sweep direction and the extracted set and reset voltage are 3.25 V and $-$0.55 V, respectively. The resistance window is quite high, and the set compliance current is 1 mA. (Blue) Typical I-V curve after the bended device was torn off from the silicon wafer.

  • Figure 5

    (Color online) The retention behavior of our parylene-C based device measured by applying a 0.1 V read voltage at room temperature. There is no apparent degradation after $10^4$ s for both LRS and HRS.

  • Figure 6

    (Color online) The typical I-V curve of the writing process of our multi-functional device at bright environment.

  • Figure 7

    (Color online) The writing process of our multi-functional device. At about 10 s, the light is on, which resulted in the switching of RRAM.

  • Figure 8

    (Color online) The relationship between the total voltages applied on the multi-functional device and the threshold of light intensity of the incident light that just can switch the RRAM. Here, the light intensity of the incident light is expressed as the brightness percentage of the lamp. The threshold of light intensity will decrease when the total voltages increase.