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SCIENCE CHINA Information Sciences, Volume 63 , Issue 8 : 189401(2020) https://doi.org/10.1007/s11432-019-2667-5

Fully coupled electrothermal simulation of resistive random access memory (RRAM) array

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  • ReceivedJul 2, 2019
  • AcceptedSep 23, 2019
  • PublishedApr 15, 2020

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant Nos. 61431014, 61504121, 61874038, 61971375) and the Science Challenge Project (Grant No. TZ2018002).


Supplement

Appendixes A–C.


References

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  • Figure 1

    (Color online) (a) and (b) schematics of conventional VRRAM array and its cell; (c) 4-cell unit, (d) array, and (e) cell structures of the proposed CGVRRAM; (f) electrode current and (g) the maximum temperature and reset resistance of CGVRRAM cell as a function of biasing voltage; (h) the maximum temperatures and cell resistances of CGVRRAM unit as a function of biasing voltage; (i) the maximum temperature and cell resistance of programmed cells as a function of biasing voltage.

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