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SCIENCE CHINA Information Sciences, Volume 63 , Issue 12 : 229402(2020) https://doi.org/10.1007/s11432-019-2732-1

A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process

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  • ReceivedJul 2, 2019
  • AcceptedNov 8, 2019
  • PublishedSep 1, 2020

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant Nos. 61701114, 61941103), National Key Research and Development Program (Grant No. 2018YFB1801602), Scientific Research Foundation of Graduate School of Southeast University (Grant No. YBJJ1811), and China Scholarship Council (CSC).


Supplement

Appendixes A–E.


References

[1] Shopov S, Balteanu A, Hasch J. A 234-261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4-7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output. IEEE J Solid-State Circuits, 2016, 51: 2054-2065 CrossRef ADS Google Scholar

[2] Yishay R B, Elad D. A 17.5 dBm D-Band power amplifier and doubler chain in SiGe BiCMOS technology. In: Proceedings of European Microwave Integrated Circuits Conference (EuMIC), 2014. 53--56. Google Scholar

[3] Hou D, Chen J, Yan P. A 270 GHz 9 Multiplier Chain MMIC With On-Chip Dielectric-Resonator Antenna. IEEE Trans THz Sci Technol, 2018, 8: 224-230 CrossRef ADS Google Scholar

[4] Peng Z, Hou D, Chen J, et al. A 28 GHz low phase-noise colpitts VCO with wide tuning-range in SiGe technology. In: Proceedings of IEEE Radio Frequency Integration Technology (RFIT), 2018. 1--3. Google Scholar

[5] Zhou P, Chen J, Li H, et al. A High-Efficiency E-Band SiGe HBT Frequency Tripler With Broadband Performance. In: Proceedings of IEEE MTT-S International Microwave Symposium (IMS), 2018. 690--693. Google Scholar

[6] Chou C F, Hsiao Y H, Wu Y C. Design of a V -Band 20-dBm Wideband Power Amplifier Using Transformer-Based Radial Power Combining in 90-nm CMOS. IEEE Trans Microwave Theor Techn, 2016, 64: 4545-4560 CrossRef ADS Google Scholar

[7] Zhou P, Yan P, Chen J. A high-efficiency, high harmonic rejection E-band SiGe HBT frequency tripler for high-resolution radar application. Sci China Inf Sci, 2019, 62: 069406 CrossRef Google Scholar

[8] Sarkar A, Aryanfar F, Floyd B A. A 28-GHz SiGe BiCMOS PA With 32% Efficiency and 23-dBm Output Power. IEEE J Solid-State Circuits, 2017, 52: 1680-1686 CrossRef ADS Google Scholar

[9] Wu K, Muralidharan S, Hella M M. A Wideband SiGe BiCMOS Frequency Doubler With 6.5-dBm Peak Output Power for Millimeter-Wave Signal Sources. IEEE Trans Microwave Theor Techn, 2018, 66: 187-200 CrossRef ADS Google Scholar

  • Figure 1

    (Color online) (a) Block diagram of the D-Band signal source; (b) schematic of the E-Band tripler; (c) schematic of the D-Band doubler; (d) simulated output power of the D-Band doubler versus input power and base bias voltage at protectłinebreak 78 GHz; (e) die micrograph of the signal source; (f) measured output frequency and phase noise vs. the tuning voltage $V_{\rm~tune}$ of VCO; (g) measured output power and harmonic suppression vs. the tuning voltage $V_{\rm~tune}$ of VCO.

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