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SCIENCE CHINA Information Sciences, Volume 63 , Issue 10 : 202402(2020) https://doi.org/10.1007/s11432-019-2778-8

Reconfigurable vertical field-effect transistor based on graphene/MoTe$_2$/graphite heterostructure

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  • ReceivedNov 3, 2019
  • AcceptedJan 21, 2020
  • PublishedSep 3, 2020

Abstract

Reconfigurable field-effect transistors have attracted enormous attention over the past decades because of their potential in implementing logic and analog circuit functions with fewer resources of transistors compared with complementary metal-oxide-semiconductor transistors. However, the miniaturization of traditional reconfigurable transistors is still a challenge owing to their inherent planar multi-gate structure. Herein, we fabricated a dual-gate vertical transistor based on graphene/MoTe$_2$/graphite van der Waals heterostructure and demonstrated a switchable n-type, V-shape ambipolar and p-type field-effect characteristics by varying the voltages of the top gate and drain electrodes. According to the band diagram analysis, we reveal that the reconfiguring ability of the field-effect characteristics stems from the asymmetric injection efficiency of the carriers through the gate-tunable barriers at the interfaces. Our results offer a potential approach to achieve device miniaturization of reconfigurable transistors.


Acknowledgment

This work was supported in part by National Key Basic Research Program of China (Grant No. 2015CB921600), National Natural Science Foundation of China (Grant Nos. 61974176, 61574076, 61921005), Natural Science Foundation of Jiangsu Province (Grant Nos. BK20180330, BK20150055), and Fundamental Research Funds for the Central Universities (Grant Nos. 020414380122, 020414380084).


Supplement

Figures S1–S5 and Table S1.


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  • Figure 1

    (Color online) Device structure and bottom gate field-effect characteristics of the RVFET. (a) Schematic of the RVFET based on graphene/MoTe$_2$/graphite vertical van der Waals heterostructure. (b) Field-effect of drain-source current versus bottom gate voltage under different $V_{\rm~ds}$ biases. The inset shows the optical micrograph of the RVFET.

  • Figure 2

    (Color online) Reconfigurable electrical performance of RVFET. (a), (b) Field-effect transfer curves at $\pm$0.5 V $V_{\rm~ds}$ and different $V_{\rm~tg}$ varies between $-$6 V and 6 V. (c) The typical n-type, V-shape, and p-type transfer characteristic curves from the same RVFET device by reconfiguring the bias voltages of $V_{\rm~ds}$ and $V_{\rm~tg}$.

  • Figure 3

    (Color online) Band diagrams of RVFET corresponding to eight carrier transport regimes (a)–(h) that are the different combinations of the $V_{\rm~bg}$ (80 or $-$80 V), $V_{\rm~tg}$ (6 or $-$6 V), and $V_{\rm~ds}$ (0.5 or $-$0.5 V). Thick solid and thin dashed lines indicate majority and minority injection of the charge carriers, respectively.

  • Figure 4

    (Color online) Temperature-dependent charge transport of RVFET. Field-effect transfer characteristics by sweeping $V_{\rm~bg}$ at different temperatures ranging from 125 to 300 K with $V_{\rm~ds}=0.2$ V in (a) and $V_{\rm~ds}=-0.2$ V in (b). (c) Arrhenius plot at $V_{\rm~ds}=~0.2$ V with $V_{\rm~bg}$ varying from $-$80 to $-$40 V (p-branch) and 40 to 80 V (n-branch). (d) Variation of effective barrier height extracted from the slope of the fitted lines in (c). The top gate was floated in this test.

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