This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61421005, 61434007) and 111 Project (Grant No. B18001).
[1] Thompson S E, Sun S E, Choi S E. Uniaxial-Process-Induced Strained-Si: Extending the CMOS Roadmap. IEEE Trans Electron Devices, 2006, 53: 1010-1020 CrossRef ADS Google Scholar
[2] Ji Z G, Chen H B, Li X Y. Design for reliability with the advanced integrated circuit (IC) technology: challenges and opportunities. Sci China Inf Sci, 2019, 62: 226401: 1--4. Google Scholar
[3] Hou C Y. Design challenges and enablement for 28nm and 20nm technology nodes. In: Symposium on VLSI Technology (VLSI), Honolulu, 2010. 225--226. Google Scholar
[4] Ren P, Xu X, Hao P, et al. Adding the missing time-dependent layout dependency into device-circuit-layout co-optimization - New findings on the layout dependent aging effects. In: IEEE Int Electr Dev Meeting (IEDM), Washington, 2015. 11.7.1--11.7.4. Google Scholar
[5] Jiang H, Sagong H, Kim J, et al. Localized layout effect related reliability approach in 8nm FinFETs technology: from transistor to circuit. In: IEEE Int Reliab Phys Symp (IRPS), Monterey, 2019. 1--5. Google Scholar
[6] Rezzak N, Schrimpf R D, Alles M L, et al. Layout-related stress effects on radiation-induced leakage current. IEEE Trans Nucl Science, 2010, 57: 3288--3292. Google Scholar
[7] Arora R, Zhang E X, Seth S. Trade-offs between RF performance and total-dose tolerance in 45-nm RF-CMOS. IEEE Trans Nucl Sci, 2011, 58: 2830-2837 CrossRef ADS Google Scholar
[8] Ratti L, Gaioni L, Manghisoni M. TID-induced degradation in static and noise behavior of sub-100 nm multifinger bulk NMOSFETs. IEEE Trans Nucl Sci, 2011, 58: 776-784 CrossRef ADS Google Scholar
[9] Gerardin S, Bagatin M, Cornale D. Enhancement of transistor-to-transistor variability due to total dose effects in 65-nm MOSFETs. IEEE Trans Nucl Sci, 2015, 62: 2398-2403 CrossRef ADS Google Scholar
Figure 1
(Color online) (a) Box-plot of the drain current of PMOS devices as a function of SA values at the same overdrive voltage (${\boldsymbol~V}_{\rm~ov}$ = 0.6 V). The inset shows the definition of SA. (b) The typical transfer characteristic curves of 65-nm PMOS device with SA of 0.18 $\mu$m before and after irradiation. (c) Box-plot of ${\boldsymbol~V}_{\rm~th}$ shift as a function of SA values after 1 Mrad(Si) TID irradiation.
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