SCIENCE CHINA Information Sciences, Volume 64 , Issue 2 : 129401(2021) https://doi.org/10.1007/s11432-019-2795-7

Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET

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  • ReceivedDec 13, 2019
  • AcceptedFeb 4, 2020
  • PublishedOct 27, 2020


There is no abstract available for this article.


This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61421005, 61434007) and 111 Project (Grant No. B18001).


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  • Figure 1

    (Color online) (a) Box-plot of the drain current of PMOS devices as a function of SA values at the same overdrive voltage (${\boldsymbol~V}_{\rm~ov}$ = 0.6 V). The inset shows the definition of SA. (b) The typical transfer characteristic curves of 65-nm PMOS device with SA of 0.18 $\mu$m before and after irradiation. (c) Box-plot of ${\boldsymbol~V}_{\rm~th}$ shift as a function of SA values after 1 Mrad(Si) TID irradiation.