This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61421005, 61434007) and 111 Project (Grant No. B18001).
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Figure 1
(Color online) (a) Box-plot of the drain current of PMOS devices as a function of SA values at the same overdrive voltage (${\boldsymbol~V}_{\rm~ov}$ = 0.6 V). The inset shows the definition of SA. (b) The typical transfer characteristic curves of 65-nm PMOS device with SA of 0.18 $\mu$m before and after irradiation. (c) Box-plot of ${\boldsymbol~V}_{\rm~th}$ shift as a function of SA values after 1 Mrad(Si) TID irradiation.