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SCIENCE CHINA Information Sciences, Volume 64 , Issue 4 : 149401(2021) https://doi.org/10.1007/s11432-019-2854-9

Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design

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  • ReceivedOct 5, 2019
  • AcceptedMar 18, 2020
  • PublishedNov 19, 2020

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported in part by National Natural Science Foundation of China (Grant No. 616340084).


References

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[6] Wang J J, Bi J S, Bai H, et al. Simulation macro-model for ${\rm~~Hf_{0.5}Zr_{0.5}O_2}$-based ferroelectric capacitor. In: Proceedings of the 2020 33th IEEE International Conference on Microelectronic Test Structures, 2020. Google Scholar

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  • Figure 1

    (Color online) Simulation results of single event effects of nvSRAM in different operating states. (a) Flowchart for building the FeCap model; (b) experimental results and macro-model simulation results for FeCap at different voltages; (c) independent double exponential current pulses; (d) 6T2C nvSRAM simulation with a peripheral circuit; (e) schematic of the timing chart of the nvSRAM operation; (f) double exponential pulses at $T~=~555$ ns and 560 ns in the “power-off" state; (g) double exponential current pulses with different LET values in the “store" state; (h) threshold LET values under different operating states; (i) double exponential current pulses applied in the “store" phase under different FeCap model parameters.