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This work was supported in part by National Natural Science Foundation of China (Grant No. 616340084).
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Figure 1
(Color online) Simulation results of single event effects of nvSRAM in different operating states. (a) Flowchart for building the FeCap model; (b) experimental results and macro-model simulation results for FeCap at different voltages; (c) independent double exponential current pulses; (d) 6T2C nvSRAM simulation with a peripheral circuit; (e) schematic of the timing chart of the nvSRAM operation; (f) double exponential pulses at $T~=~555$ ns and 560 ns in the “power-off" state; (g) double exponential current pulses with different LET values in the “store" state; (h) threshold LET values under different operating states; (i) double exponential current pulses applied in the “store" phase under different FeCap model parameters.
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