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SCIENCE CHINA Information Sciences, Volume 63 , Issue 4 : 149401(2020) https://doi.org/10.1007/s11432-019-9872-x

Complementary tunneling transistors based on WSe$_~\bf{2}$/SnS$_~\bf{2}$ van der Waals heterostructure

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  • ReceivedMar 11, 2019
  • AcceptedApr 18, 2019
  • PublishedOct 18, 2019

Abstract

There is no abstract available for this article.


Acknowledgment

This work was partly supported by National Natural Science Foundation of China (NSFC) (Grant Nos. 61851401, 61421005, 61822401), National Science and Technology Major Project (Grant No. 2017ZX- 02315001-004), and 111 Project (Grant No. B18001).


References

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  • Figure 1

    (Color online) The schematic structures of p-TFET (a) and n-TFET (b). The band alignment of p-TFET (c)protect łinebreak and n-TFET (d) in the off-state and on-state. The transfer characteristics of the WSe$_2$ and SnS$_2$ FET (e). The measured transfer characteristics of p-TFET (f) and n-TFET (g) at room temperature; (Inset) the corresponding output characteristics. Temperature-dependence characteristics of the p-TFET (h) and n-TFET (i).

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