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SCIENTIA SINICA Chimica
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SCIENTIA SINICA Chimica, Volume 49 , Issue 3 : 455-469(2019) https://doi.org/10.1360/N032018-00159

Application of scanning probe oxidation lithography in fabrication of micro-nano devices

Lixian Tian , Xi Yu *, Shengbin Lei *, Wenping Hu *
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  • ReceivedJul 5, 2018
  • AcceptedAug 7, 2018
  • PublishedDec 4, 2018
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Abstract

Scanning probe lithography technology is mainly used the electrical, mechanical or thermal interaction between the atomic force microscope tip and substrate to perform imaging, manipulation and modification of the nanoscale surface. It is a simple, rapid and accurate nanostructure preparation technique. The scanning probe oxidation lithography technology has a good prospect, using highly localized water bridge formed between the tip and the sample surface to prepare micro-nano scale structures on material surface through electrochemical reactions. It has been widely used to produce nano-scale functionalized patterns and micro-nano devices. The mechanism of the patterning process and influencing factors such as voltage, tip-sample force, duration, relative humidity, and scanning speed are described in detail in this paper. Then, the work on the preparation of micro-nano devices using this technology is summarized. Finally, we discussed the advantages and problems of this technology, as well as the potential solution and development of it.


Funded by

国家自然科学基金(21572157,21773169,51633006)

科技部国家重点专项(2016YFB0401100)

天津大学北洋青年学者计划


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    Figure 1

    A scheme of oxidation scanning probe lithography [20] (color online).

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    Figure 2

    (a) A scheme of water bridge formation. (b) A schematic diagram of two-directional growth about nanoscale oxides. (c) AFM images of SiO2 formed on silicon surface. (d) Height distribution of SiO2 after HF etching [33,34] (color online).

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    Figure 3

    Equipotential distribution map near the AFM tip on natural GaAs oxide layers and GaAs substrate. (a) Relative humidity is 0%; (b) relative humidity is 70%. Measurement of capillary force in contact mode (c) and non-contact (d) mode in the presence of an electric field [30,37] (color online).

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    Figure 4

    (A) Molecular dynamics evolution of water molecules on the hydrophilic surface when the external electric field intensity is 2.0 V nm−1 (O: red; H: white). (A-a) Equilibrium state without electric field; (A-b) equilibrium state of 35 ps after applying an electric field.; (A-c) Final equilibrium state (75 ps). (B) The dependence of the oxide height h on the absolute value of the tip voltage on a n-type (0.01 Ω cm) Si substrate at different scanning speed [29,42] (color online).

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    Figure 5

    (a) Sketch of the AFM tip position for two different kinds of tip-sample interaction. (b) Typical deflection curve of a cantilever vs. z position of the sample. Relationship between aspect ratio and force in contact mode (c) and tapping mode (d) when a DC voltage of 12 V is applied to the silicon surface [42,44] (color online).

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    Figure 6

    Silicon oxide height h as a function of tip speed [25].

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    Figure 7

    (a) A schematic diagram of the bridge formed between AFM tip and the sample surface. (b) The dependence of the Kelvin radius on the relative humidity at 20 °C. (c) The thickness of silicon oxide as a function of relative humidity [30,48] (color online).

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    Figure 8

    (a) Snap-off separation as a function of pulse duration; (b) the water meniscus diameter as a function of pulse time at RH=40%, V=24 V [28].

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    Figure 9

    The relationship between lateral (a) and vertical (b) growth rate of oxide growth and pulse time [34] (color online).

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    Figure 10

    (a) AFM oxide nanolithography is used to prepare nanowires below 20 nm with different geometries. (b) A schematic for preparing silicon nanostructures by atomic force microscope oxidation lithography. (c) AFM images of silicon nanowires attached to Pt. (d) The output (left) and transfer curve (right) of silicon nanowire transistor [53,58] (color online).

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    Figure 11

    (a) Atomic force microscopy (AFM) friction image of single quantum dot prepared on monolayer graphene using AFM nano oxidation lithography. (b) Coulomb blockade of graphene quantum devices measured at T~50 mK [67].

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    Figure 12

    (a) AFM image of a ribbon device fabricated on monolayer graphene; (b) the relationship between the gate conductance G and gate voltage Vg measured at T=4.2 K, B=0 T; (c) the relationship between the gate conductance G and gate voltage Vg measured at T=4.2 K, B=9 T [69] (color online).

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    Figure 13

    (a) A schematic of oxidation lithography based on AFM; (b) the frictional image of graphene sheets after oxidation lithography at Vtip=−8.0 V, cantilever scan speed vs=50 nm/s. (c) The width of the oxidation line (wb) varies with tip bias voltage Vtip when vs is 50 nm/s. (d) (dotted line) The relationship between differential conductance G and gate voltage Vg at both ends of the original graphene at T=4.2 K. (solid line) The relationship between G and Vg in G/GO/G junction at T=4.2 K. Bias applied to the AFM cantilever Vtip=−5.5 (red), −6.0 (magenta), −6.5 (yellow), −7.0 (green), −8.0 (blue), −9.0 (purple), and −11.0 V (dark green) (from top to bottom). (e) The minimum conductivity Gmin as a function of Vtip at T=4.2 K [68] (color online).

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    Figure 14

    (a) AFM phase diagram of a MoS2 thin-film micro-nano device. The narrowest part of the channel is 200 nm wide. (b) AFM topography of oxides prepared on WSe2 wafers by scanning probe oxidation lithography. After the o-SPL patterning, the channel width of the transistor is 80 nm. (c) AFM topography after etching with deionized water. (d) The schematic, optical microscope images and AFM images of BP field effect transistor prepared on patterned BP (between electrodes A and B) and original BP (between electrodes B and C), respectively. (e) The transfer curve of BP field effect transistor [20,70,71] (color online).

  • Table 1   Half cell reactions of different samples

    样品

    阳极发生的半电池反应

    阴极发生的半电池反应

    Si

    Si+4h++2OH−→SiO2+2H+

    2H+(aq)+2e−→H2

    GaAs

    2GaAs+12h++6H2O→Ga2O3+As2O3+12H+

    SiC

    SiC+8h++4OH−→SiO2+4H++CO2

    MoS2

    2MoS2+9O2+4H2O→2MoS3+4H2SO4

    WSe2

    WSe2+9H2O+14h+→WO3+2SeO32−+18H+

    R--CH3

    R--CH3+2OH−+2h+→RCOOH+2H2

    任意金属表面

    M+nH2O→MOn+2nH++2ne−